PMZ760SN

PMZ760SN N-channel TrenchMOS standard level FET Rev. 02 — 12 July 2007 BOTTOM VIEW Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features I Profile 55 % lower than SOT23 I Low on-state resistance I Leadless package I Footprint 90 % smaller than SOT23 I Fast switching I Standard level compatible threshold 1.3 Applications I Driver circuits I Load switching in portable appliances 1.4 Quick reference data I VDS ≤ 60 V I RDSon ≤ 900 mΩ I ID ≤ 1.22 A I Ptot ≤ 2.50 W 2. Pinning information Table 1. Pin 1 2 3 Pinning Description gate (G) source (S) drain (D) 1 3 2 Transparent top view G mbb076 Simplified outline Symbol D SOT883 (SC-101) S NXP Semiconductors PMZ760SN N-channel TrenchMOS standard level FET 3. Ordering information Table 2. Ordering information Package Name PMZ760SN SC-101 Description leadless ultra small plastic package; 3 solder lands; body 1.0 × 0.6 × 0.5 mm Version SOT883 Type number 4. Limiting values CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM Vesd drain-source voltage drain-gate voltage (DC)...