2N7002BK

2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits „ „ „ „ „ Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications „ „ „ „ Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance Conditions Tamb = 25 °C Tamb = 25 °C Tamb = 25 °C; VGS = 10 V Tj = 25 °C; VGS = 10 V; ID = 500 mA [1] Min - Typ 1 Max 60 ±20 350 1.6 Unit V V mA Ω [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. NXP Semiconductors 2N7002BK 60 V, 350 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning Symbol G S D Description gate source drain 1 2 G Simplified outline 3 Graphic symbol D S 017aaa000 3. Ordering information Table 3. Ordering information Package Name 2N7002BK Description Version SOT23 TO-236AB plastic surface-mounted package; 3 leads Type number 4. Marking Table 4. 2N7002BK [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China Marking codes...