BSS138P

BSS138P 60 V, 360 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits „ „ „ „ Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications „ „ „ „ Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance Conditions Tamb = 25 °C Tamb = 25 °C Tamb = 25 °C; VGS = 10 V Tj = 25 °C; VGS = 10 V; ID = 300 mA [1] Min - Typ 0.9 Max 60 ±20 360 1.6 Unit V V mA Ω [2] [1] [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. Pulse test: tp ≤ 300 μs; δ ≤ 0.01. NXP Semiconductors BSS138P 60 V, 360 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning Symbol G S D Description gate source drain 1 2 mbb076 Simplified outline 3 Graphic symbol D G S 3. Ordering information Table 3. Ordering information Package Name BSS138P Description Version SOT23 TO-236AB plastic surface-mounted package; 3 leads Type number 4. Marking Table 4. BSS138P [1] * = placeholder for manufacturing site code Marking codes Marking code...