PSMN4R2-60PL

PSMN4R2-60PL 5 February 2013 TO -2 20A B N-channel 60 V, 3.9 mΩ logic level MOSFET in SOT78 Product data sheet 1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits High efficiency due to low switching & conduction losses Robust construction for demanding applications Logic level gate 3. Applications Battery-powered tools Load switching Motor control Uninterruptible power supplies 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11 VGS = 10 V; ID = 25 A; VDS = 48 V; Fig. 13; Fig. 14 151 27 nC nC [1] Min - Typ - Max 60 130 263 Unit V A W Static characteristics drain-source on-state resistance 3.17 3.9 mΩ Dynamic characteristics QG(tot) QGD EDS(AL)S total gate charge gate-drain charge Avalanche ruggedness non-repetitive drainsource avalanche energy [1] ID = 130 A; Vsup ≤ 60 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 3 - - 283 mJ Continuous current is limited by package. Scan or click this QR code to view the latest information for this product NXP Semiconductors PSMN4R2-60PL N-channel 60 V, 3.9 mΩ logic level MOSFET in SOT78 5. Pinning information Tab...