PSMN005-75P

PSMN005-75P N-channel TrenchMOS SiliconMAX standard level FET Rev. 01 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Suitable for high frequency applications due to fast switching characteristics 1.3 Applications „ High frequency computer motherboard DC-to-DC convertors „ OR-ing applicationss 1.4 Quick reference data Table 1. VDS ID Ptot Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1 and 3 Tmb = 25 °C; see Figure 2 Min Typ Max 75 75 230 Unit V A W drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation gate-drain charge Symbol Parameter Dynamic characteristics QGD VGS = 10 V; ID = 75 A; VDS = 60 V; Tj = 25 °C; see Figure 11 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 9 and 10 50 nC Static characteristics RDSon drain-source on-state resistance 4.3 5 mΩ NXP Semiconductors PSMN005-75P N-channel TrenchMOS SiliconMAX standard level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol G D S D Description gate drain source drain mbb076 Simplified outline mb Graphic symbol D G S 1 2 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Orde...