N-Channel MOSFET
LF
BUK7Y25-60E
7 May 2013
PA K
56
N-channel 60 V, 25 mΩ standard level MOSFET in LFPAK56
Product data sheet
1. Gen...
Description
LF
BUK7Y25-60E
7 May 2013
PA K
56
N-channel 60 V, 25 mΩ standard level MOSFET in LFPAK56
Product data sheet
1. General description
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) rating of greater than 1 V at 175 °C
3. Applications
12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching
4. Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 10 A; Tj = 25 °C; Fig. 11 ID = 10 A; VDS = 48 V; VGS = 10 V; Tj = 25 °C; Fig. 13; Fig. 14 5.6 nC Min Typ Max 60 34 64 Unit V A W
Static characteristics drain-source on-state resistance 15.7 25 mΩ
Dynamic characteristics QGD gate-drain charge
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NXP Semiconductors
BUK7Y25-60E
N-channel 60 V, 25 mΩ standard level MOSFET in LFPAK56
5. Pinning information
Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate moun...
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