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BUK7Y43-60E Dataheets PDF



Part Number BUK7Y43-60E
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-Channel MOSFET
Datasheet BUK7Y43-60E DatasheetBUK7Y43-60E Datasheet (PDF)

LF BUK7Y43-60E 7 May 2013 PA K 56 N-channel 60 V, 43 mΩ standard level MOSFET in LFPAK56 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • • • • Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True st.

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LF BUK7Y43-60E 7 May 2013 PA K 56 N-channel 60 V, 43 mΩ standard level MOSFET in LFPAK56 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • • • • Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) rating of greater than 1 V at 175 °C 3. Applications • • • • 12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 11 Min Typ Max 60 22 45 Unit V A W Static characteristics drain-source on-state resistance gate-drain charge 29.8 43 mΩ Dynamic characteristics QGD ID = 5 A; VDS = 48 V; VGS = 10 V; Tj = 25 °C; Fig. 13; Fig. 14 3.7 nC Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK7Y43-60E N-channel 60 V, 43 mΩ standard level MOSFET in LFPAK56 5. Pinning information Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate mounting base; connected to drain 1 2 3 4 G mbb076 Simplified outline mb Graphic symbol D S LFPAK56; PowerSO8 (SOT669) 6. Ordering information Table 3. Ordering information Package Name BUK7Y43-60E LFPAK56; Power-SO8 Description Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads Version SOT669 Type number 7. Marking Table 4. Marking codes Marking code 74360E Type number BUK7Y43-60E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Tj ≤ 175 °C; DC Tmb = 25 °C; VGS = 10 V; Fig. 1 Tmb = 100 °C; VGS = 10 V; Fig. 1 IDM Ptot Tstg BUK7Y43-60E Min -20 -55 Max 60 60 20 22 15.5 87 45 175 Unit V V V A A A W °C peak drain current total power dissipation storage temperature Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4 Tmb = 25 °C; Fig. 2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved Product data sheet 7 May 2013 2 / 13 NXP Semiconductors BUK7Y43-60E N-channel 60 V, 43 mΩ standard level MOSFET in LFPAK56 Symbol Tj IS ISM EDS(AL)S Parameter junction temperature Conditions Min -55 Max 175 Unit °C Source-drain diode source current peak source current Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C ID = 22 A; Vsup ≤ 60 V; RGS = 50 Ω; VGS = 60 V; Tj(init) = 25 °C; unclamped; Fig. 3 [1] [2] 24 20 16 12 8 4 0 0 40 - 22 87 A A Avalanche ruggedness non-repetitive drain-source avalanche energy [1][2] - 12 mJ Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Refer to application note AN10273 for further information. 003aai610 ID (A) 120 Pder (%) 80 03aa16 0 50 100 150 Tmb (°C) 200 0 50 100 150 Tmb (°C) 200 Fig. 1. Continuous drain current as a function of mounting base temperature Fig. 2. Normalized total power dissipation as a function of mounting base temperature BUK7Y43-60E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved Product data sheet 7 May 2013 3 / 13 NXP Semiconductors BUK7Y43-60E N-channel 60 V, 43 mΩ standard level MOSFET in LFPAK56 102 IAL (A) 10 003aai611 (1) 1 (2) 10-1 (3) 10-2 10-3 10-2 10-1 1 tAL (ms) 10 Fig. 3. Avalanche rating; avalanche current as a function of avalanche time 103 ID (A) 102 Limit R DSon = V DS / ID 003aai612 10 tp =10 µ s 100 µ s 1 DC 1 ms 10 ms 100 ms 10-1 10-2 1 10 VDS (V) 102 Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base Conditions Fig. 5 Min Typ Max 3.33 Unit K/W BUK7Y43-60E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved Product data sheet 7 May 2013 4 / 13 NXP Semiconductors BUK7Y43-60E N-channel 60 V, 43 mΩ standard level MOSFET in LFPAK56 10 Zth(j-mb) (K/W) δ = 0.5 1 0.2 0.1 0.05 10-1 0.02 single shot P 003aaj113 δ= tp T tp 10-2 10-6 10-5 10-4 10-3 10-2 10-1 t T tp (s) 1 Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7. Symbol V(BR)DSS Characteristics Parameter drain-source breakdown voltage gate-source thr.


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