Document
LF
BUK7Y43-60E
7 May 2013
PA K
56
N-channel 60 V, 43 mΩ standard level MOSFET in LFPAK56
Product data sheet
1. General description
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
• • • •
Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) rating of greater than 1 V at 175 °C
3. Applications
• • • •
12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching
4. Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 11 Min Typ Max 60 22 45 Unit V A W
Static characteristics drain-source on-state resistance gate-drain charge 29.8 43 mΩ
Dynamic characteristics QGD ID = 5 A; VDS = 48 V; VGS = 10 V; Tj = 25 °C; Fig. 13; Fig. 14 3.7 nC
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NXP Semiconductors
BUK7Y43-60E
N-channel 60 V, 43 mΩ standard level MOSFET in LFPAK56
5. Pinning information
Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate mounting base; connected to drain
1 2 3 4
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
LFPAK56; PowerSO8 (SOT669)
6. Ordering information
Table 3. Ordering information Package Name BUK7Y43-60E LFPAK56; Power-SO8 Description Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads Version SOT669 Type number
7. Marking
Table 4. Marking codes Marking code 74360E Type number BUK7Y43-60E
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Tj ≤ 175 °C; DC Tmb = 25 °C; VGS = 10 V; Fig. 1 Tmb = 100 °C; VGS = 10 V; Fig. 1 IDM Ptot Tstg
BUK7Y43-60E
Min -20 -55
Max 60 60 20 22 15.5 87 45 175
Unit V V V A A A W °C
peak drain current total power dissipation storage temperature
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4 Tmb = 25 °C; Fig. 2
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© NXP B.V. 2013. All rights reserved
Product data sheet
7 May 2013
2 / 13
NXP Semiconductors
BUK7Y43-60E
N-channel 60 V, 43 mΩ standard level MOSFET in LFPAK56
Symbol Tj IS ISM EDS(AL)S
Parameter junction temperature
Conditions
Min -55
Max 175
Unit °C
Source-drain diode source current peak source current Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C ID = 22 A; Vsup ≤ 60 V; RGS = 50 Ω; VGS = 60 V; Tj(init) = 25 °C; unclamped; Fig. 3
[1] [2]
24 20 16 12 8 4 0
0 40
-
22 87
A A
Avalanche ruggedness non-repetitive drain-source avalanche energy
[1][2]
-
12
mJ
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Refer to application note AN10273 for further information.
003aai610
ID (A)
120 Pder (%) 80
03aa16
0
50
100
150
Tmb (°C)
200
0
50
100
150
Tmb (°C)
200
Fig. 1.
Continuous drain current as a function of mounting base temperature
Fig. 2.
Normalized total power dissipation as a function of mounting base temperature
BUK7Y43-60E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
7 May 2013
3 / 13
NXP Semiconductors
BUK7Y43-60E
N-channel 60 V, 43 mΩ standard level MOSFET in LFPAK56
102 IAL (A) 10
003aai611
(1)
1
(2)
10-1
(3)
10-2 10-3
10-2
10-1
1
tAL (ms)
10
Fig. 3.
Avalanche rating; avalanche current as a function of avalanche time
103 ID (A) 102 Limit R DSon = V DS / ID
003aai612
10
tp =10 µ s 100 µ s
1
DC 1 ms 10 ms 100 ms
10-1
10-2
1
10
VDS (V)
102
Fig. 4.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base Conditions Fig. 5 Min Typ Max 3.33 Unit K/W
BUK7Y43-60E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
7 May 2013
4 / 13
NXP Semiconductors
BUK7Y43-60E
N-channel 60 V, 43 mΩ standard level MOSFET in LFPAK56
10 Zth(j-mb) (K/W) δ = 0.5 1 0.2 0.1 0.05 10-1 0.02 single shot P
003aaj113
δ=
tp T
tp 10-2 10-6 10-5 10-4 10-3 10-2 10-1
t T tp (s) 1
Fig. 5.
Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7. Symbol V(BR)DSS Characteristics Parameter drain-source breakdown voltage gate-source thr.