N-Channel MOSFET
D2
PA K
BUK962R5-60E
N-channel TrenchMOS logic level FET
Rev. 2 — 16 May 2012 Product data sheet
1. Product profile
1...
Description
D2
PA K
BUK962R5-60E
N-channel TrenchMOS logic level FET
Rev. 2 — 16 May 2012 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5V at 175 °C
1.3 Applications
12 V Automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance gate-drain charge Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 11 VGS = 5 V; ID = 25 A; VDS = 48 V; see Figure 13; see Figure 14
[1]
Min -
Typ 2
Max 60 120 357 2.5
Unit V A W mΩ
Static characteristics
Dynamic characteristics QGD 41.2 nC
[1]
Continuous current is limited by package.
NXP Semiconductors
BUK962R5-60E
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mou...
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