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BUK7607-55B Dataheets PDF



Part Number BUK7607-55B
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-Channel MOSFET
Datasheet BUK7607-55B DatasheetBUK7607-55B Datasheet (PDF)

D2 PA K BUK7607-55B N-channel TrenchMOS standard level FET Rev. 2 — 26 July 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  Low conduction losses due to low on-state resistance  Q101 compliant  Suitable fo.

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D2 PA K BUK7607-55B N-channel TrenchMOS standard level FET Rev. 2 — 26 July 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  Low conduction losses due to low on-state resistance  Q101 compliant  Suitable for standard level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications  12 V and 24 V loads  Automotive systems  General purpose power switching  Motors, lamps and solenoids 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3 [1] Min - Typ 5.8 Max 55 75 203 7.1 Unit V A W mΩ total power dissipation Tmb = 25 °C; see Figure 2 drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped VGS = 10 V; ID = 25 A; VDS = 44 V; Tj = 25 °C; see Figure 13 Static characteristics Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy gate-drain charge 351 mJ Dynamic characteristics QGD 17 nC [1] Continuous current is limited by package. NXP Semiconductors BUK7607-55B N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain[1] source mounting base; connected to drain 2 1 3 mb D Simplified outline Graphic symbol G mbb076 S SOT404 (D2PAK) [1] It is not possible to make connection to pin 2. 3. Ordering information Table 3. Ordering information Package Name BUK7607-55B D2PAK Description Version plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) Type number BUK7607-55B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 26 July 2011 2 of 14 NXP Semiconductors BUK7607-55B N-channel TrenchMOS standard level FET 4. Limiting values Table 4. Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 Tmb = 100 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 IDM Ptot Tstg Tj IS ISM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature source current peak source current non-repetitive drain-source avalanche energy Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped [2] [1] [1] In accordance with the Absolute Maximum Rating System (IEC 60134). Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Min -20 -55 -55 Max 55 55 20 75 75 119 478 203 175 175 119 75 478 351 Unit V V V A A A A W °C °C A A A mJ [1] [2] Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 Tmb = 25 °C; see Figure 2 Source-drain diode Avalanche ruggedness [1] [2] Continuous current is limited by package. Current is limited by power dissipation chip rating. BUK7607-55B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 26 July 2011 3 of 14 NXP Semiconductors BUK7607-55B N-channel TrenchMOS standard level FET 120 ID (A) 80 (1) 03nn68 120 Pder (%) 80 03na19 40 40 0 0 50 100 150 Tmb (°C) 200 0 0 50 100 150 Tmb (°C) 200 Fig 1. Normalized continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature 03nn66 103 ID (A) 102 (1) Limit RDSon = VDS / ID tp = 10 μs 100 μs 1 ms 10 10 ms DC 100 ms 1 10-1 1 10 VDS (V) 102 Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK7607-55B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 26 July 2011 4 of 14 NXP Semiconductors BUK7607-55B N-channel TrenchMOS standard level FET 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions see Figure 4 minimum footprint; mounted on a printed-circuit board Min Typ 50 Max 0.74 Unit K/W K/W 1 Zth(j-mb) (K/W) 10-1 δ = 0.5 0.2 0.1 0.05 0.02 10-2 single shot tp P 03nn67 δ= tp T t T 10 -3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7607-55B All information provided in thi.


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