Document
D2 PA K
BUK7607-55B
N-channel TrenchMOS standard level FET
Rev. 2 — 26 July 2011 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low on-state resistance Q101 compliant Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads Automotive systems General purpose power switching Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3
[1]
Min -
Typ 5.8
Max 55 75 203 7.1
Unit V A W mΩ
total power dissipation Tmb = 25 °C; see Figure 2 drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped VGS = 10 V; ID = 25 A; VDS = 44 V; Tj = 25 °C; see Figure 13
Static characteristics
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy gate-drain charge 351 mJ
Dynamic characteristics QGD 17 nC
[1]
Continuous current is limited by package.
NXP Semiconductors
BUK7607-55B
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain[1] source mounting base; connected to drain
2 1 3 mb
D
Simplified outline
Graphic symbol
G
mbb076
S
SOT404 (D2PAK)
[1] It is not possible to make connection to pin 2.
3. Ordering information
Table 3. Ordering information Package Name BUK7607-55B D2PAK Description Version plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) Type number
BUK7607-55B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 26 July 2011
2 of 14
NXP Semiconductors
BUK7607-55B
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 Tmb = 100 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 IDM Ptot Tstg Tj IS ISM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature source current peak source current non-repetitive drain-source avalanche energy Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped
[2] [1] [1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Min -20 -55 -55 Max 55 55 20 75 75 119 478 203 175 175 119 75 478 351 Unit V V V A A A A W °C °C A A A mJ
[1] [2]
Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 Tmb = 25 °C; see Figure 2
Source-drain diode
Avalanche ruggedness
[1] [2]
Continuous current is limited by package. Current is limited by power dissipation chip rating.
BUK7607-55B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 26 July 2011
3 of 14
NXP Semiconductors
BUK7607-55B
N-channel TrenchMOS standard level FET
120 ID (A) 80
(1)
03nn68
120 Pder (%) 80
03na19
40
40
0 0 50 100 150 Tmb (°C) 200
0
0
50
100
150
Tmb (°C)
200
Fig 1.
Normalized continuous drain current as a function of mounting base temperature
Fig 2.
Normalized total power dissipation as a function of mounting base temperature
03nn66
103 ID (A) 102
(1)
Limit RDSon = VDS / ID
tp = 10 μs
100 μs 1 ms
10
10 ms DC
100 ms
1 10-1
1
10
VDS (V)
102
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7607-55B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 26 July 2011
4 of 14
NXP Semiconductors
BUK7607-55B
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions see Figure 4 minimum footprint; mounted on a printed-circuit board Min Typ 50 Max 0.74 Unit K/W K/W
1 Zth(j-mb) (K/W) 10-1 δ = 0.5 0.2 0.1 0.05 0.02 10-2 single shot
tp P
03nn67
δ=
tp T
t T
10
-3
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7607-55B
All information provided in thi.