A1337

2SA1337 Silicon PNP Epitaxial Application Low frequency low noise amplifier HF amplefier Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SA1337 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –55 –50 –5 –100 300 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –55 –50 –5 — — 1 Typ — — — — — — — — 200 — 1.0 Max — — — –0.5 –0.5 320 –0.75 –0.2 — 4.5 5.0 Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –18 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, IC = –2 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Noise figure Note: B 100 to 200 V(BR)EBO I CBO I EBO hFE* VBE VCE(sat) fT Cob NF 100 — — — — — V V MHz pF dB VCE = –12 V, IC = –2 mA I C = –10 mA, IB = –1 mA VCE = –12 V, IC = –2 mA VCB = –10 V, IE = 0, f = 1 MHz VCE = –6 V, IC = –0.1 mA, Rg = 1 kΩ, f = 1 kHz 1. The 2SA1337 is grouped by hFE as follows. C 160 to 320 See characteristic curves of 2SA1031. 2 2SA1337 Maximum Collector Dissipation ...