Silicon N Channel IGBT
MIG75J7CSB1W
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
MIG75J7CSB1W (600V/75A 7in1)
High Power Switching ...
Description
MIG75J7CSB1W
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
MIG75J7CSB1W (600V/75A 7in1)
High Power Switching Applications Motor Control Applications
· · · · · · Integrates inverter, brake power circuit and control circuits (IGBT drive units, and units for protection against short-circuit current, over-current, under-voltage and over-temperature) into a single package. The electrodes are isolated from the case Low thermal resistance VCE (sat) = 1.8 V (typ.) UL recognized: File No.E87989 Weight: 278 g (typ.)
Equivalent Circuit
20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
FO
IN VD GND
FO
IN VD GND
FO
IN VD GND
FO
IN VD GND
GND IN FO VD
GND IN FO VD
GND IN FO VD
GND VS
OUT
GND VS
OUT
GND VS
OUT
GND VS
OUT
GND VS
OUT
GND VS
OUT
GND VS
OUT
W 1. 8. 15. VD (U) GND (V) Open 2. 9. 16.
V FO (U) VD (W) IN (B) 3. 10. 17. IN (U) FO (W) IN (X)
U 4. 11. 18. GND (U) IN (W) IN (Y)
B 5. 12. 19. VD (V) GND (W) IN (Z) 6. 13. 20. FO (V) VD (L) GND (L)
N 7. 14. IN (V) FO (L)
P
1
2001-11-13
MIG75J7CSB1W
Package Dimensions: TOSHIBA 2-108G1A
Unit: mm
1. 7. 13. 19.
VD (U) IN (V) VD (L) IN (Z)
2. 8. 14. 20.
FO (U) GND (V) FO (L) GND (L)
3. 9. 15.
IN (U) VD (W) Open
4. 10. 16.
GND (U) FO (W) IN (B)
5. 11. 17.
VD (V) IN (W) IN (X)
6. 12. 18.
FO (V) GND (W) IN (Y)
2
2001-11-13
MIG75J7CSB1W
Signal Terminal Layout
Unit: mm
1. 7. 13. 19.
VD (U) IN (V) VD (L) IN (Z)
2. 8. 14. 20.
FO (U) GND (V) FO (L) GND (L)
3. 9. 15.
IN (U) VD (W) Open
...
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