3DD10

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD10, 3DD11 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch,low frequency power amplify,power adjustment. 4. Quality Class: JP, JT, JCT, GS, G, G+ TECHNICAL DATA: Specifications Parameter name Collector-Emitter Voltage Collector-Emitter Breakdown Voltage Emitter-Base Voltage Max. Collector Current Max. Collector Dissipation Junction Temperature Storage Temperature Collector-Emitter Leakage Current Collector- Emitter Saturation Voltage Drop DC Current Gain Symbols Unit A B 3DD10 C D E F 3DD11 G H I (Ta = 25°C ) VCEO V V(BR)CEO V VEBO ICM PCM Tjm Tstg ICEO VCE(sat) hFE V A W °C °C mA V 50 50 100 100 150 150 200 200 250 250 300 300 400 400 500 500 600 600 3DD10: IC=5mA 3DD11: IC=5mA 5 A~F≤20, G~I≤10 200 (Tc≤75°C) 175 -55~+175 5 A~F≤30, G~I≤15 300 (Tc≤75°C) 5.0 (A:VCE=30V;B:VCE=50V; C~I:VCE=100V) 1.8(A~F: IC=10A, IB=1.0A) 2.0 (G~I: IC=5.0A, IB=1.0A) 2.0(A~F: IC=15A, IB=1.5A) 2.0 (G~I: IC=7.5A, IB=1.5A) Max.:120 Min.:15(A~F: VCE=5V, IC=10A) Min.: 7 (G~I:VCE=10V, IC=5.0A) ≥5 (IE=15mA) Max.:120 Min.:15 (A~F: VCE=5V, IC=15A) Min.: 7 (G~I:VCE=10V, IC=7.5A) ≥5 (IE=15mA) E-Base Breakdown Voltage V(BR)EBO V hFE C...