K1160

2SK1159, 2SK1160 Silicon N Channel MOS FET REJ03G0911-0200 (Previous: ADE-208-1249) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1159, 2SK1160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C 2SK1159 2SK1160 VGSS ID ID(pulse)* IDR 2 Pch* Tch Tstg 1 Symbol VDSS Ratings 450 500 ±30 8 32 8 60 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown 2SK1159 voltage 2SK1160 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1159 2SK1160 Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 450 500 ±30 — — 2.0 — — 4.5 — — — — — — — — — Typ — — — — — 0.55 0.60 7.5 1150 340 55 17 55 100 45 0.9 350 Max — — ±10 250 3.0 0.7 0.8 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±25 V, VDS...