K1732

Ordering number:EN3827 N-Channel Silicon MOSFET 2SK1732 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. Package Dimensions unit:mm 2085A [2SK1732] 10.5 1.9 4.5 1.2 2.6 1.4 1.2 7.5 1.0 8.5 1.6 0.5 1 2 3 0.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 2.5 2.5 1 : Source 2 : Drain 3 : Gate SANYO : FLP Ratings 30 ±15 4.5 18 1.5 150 –55 to +150 Unit V V A A W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) | yfs | RDS(on) RDS(on) ID=1mA, VGS=0 IG=±100µA, VDS=0 VDS=30V, VGS=0 VGS=±12V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=2.5A ID=2.5A, VGS=10V ID=2.5A, VGS=4V 1.0 4 6.5 50 65 65 85 Conditions Ratings min 30 ±15 100 ±10 2.0 typ max Unit V V µA µA V S mΩ mΩ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, su...