2SK1732
Ordering number:EN3827
N-Channel Silicon MOSFET
2SK1732
Ultrahigh-Speed Switching Applications
Features
· Low ON resis...
Description
Ordering number:EN3827
N-Channel Silicon MOSFET
2SK1732
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping.
Package Dimensions
unit:mm 2085A
[2SK1732]
10.5 1.9 4.5
1.2
2.6 1.4
1.2
7.5
1.0
8.5
1.6 0.5 1 2 3
0.5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions
2.5
2.5
1 : Source 2 : Drain 3 : Gate SANYO : FLP
Ratings 30 ±15 4.5 18 1.5 150 –55 to +150
Unit V V A A W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) | yfs | RDS(on) RDS(on) ID=1mA, VGS=0 IG=±100µA, VDS=0 VDS=30V, VGS=0 VGS=±12V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=2.5A ID=2.5A, VGS=10V ID=2.5A, VGS=4V 1.0 4 6.5 50 65 65 85 Conditions Ratings min 30 ±15 100 ±10 2.0 typ max Unit V V µA µA V S mΩ mΩ
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, su...
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