BUK6217-55C

DP AK BUK6217-55C N-channel TrenchMOS intermediate level FET Rev. 3 — 9 July 2012 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits  AEC Q101 compliant  Suitable for standard and logic level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications  12 V and 24 V Automotive systems  Electric and electro-hydraulic power steering  Motors, lamps and solenoid control  Start-Stop micro-hybrid applications  Transmission control  Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 12 A; Tj = 25 °C; see Figure 11 ID = 25 A; VDS = 44 V; VGS = 10 V; see Figure 13; see Figure 14 ID = 44 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped Min Typ 16 Max 55 44 80 19 Unit V A W mΩ Static characteristics Dynamic characteristics QGD gate-drain charge 11.2 nC Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanc...