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BUK9277-55A Dataheets PDF



Part Number BUK9277-55A
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-Channel MOSFET
Datasheet BUK9277-55A DatasheetBUK9277-55A Datasheet (PDF)

BUK9277-55A 12 June 2014 DP AK N-channel TrenchMOS logic level FET Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits • • • Q101 compliant Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175.

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BUK9277-55A 12 June 2014 DP AK N-channel TrenchMOS logic level FET Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits • • • Q101 compliant Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 3. Applications • • • 12 V and 24 V loads Automotive and general purpose power switching Motors, lamps and solenoids 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; Fig. 2; Fig. 3 Tmb = 25 °C; Fig. 1 VGS = 10 V; ID = 10 A; Tj = 25 °C VGS = 4.5 V; ID = 10 A; Tj = 25 °C VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 13 Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy ID = 18 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped 33 mJ Min Typ Max 55 18 51 Unit V A W Static characteristics drain-source on-state resistance 59 65 69 86 77 mΩ mΩ mΩ Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK9277-55A N-channel TrenchMOS logic level FET 5. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain 2 1 3 Simplified outline mb Graphic symbol D G mbb076 S DPAK (SOT428) 6. Ordering information Table 3. Ordering information Package Name BUK9277-55A BUK9277-55A/CD DPAK DPAK Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) Version SOT428 SOT428 Type number 7. Marking Table 4. Marking codes Marking code BUK9277-55A Type number BUK9277-55A BUK9277-55A/CD 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS Ptot ID Parameter drain-source voltage drain-gate voltage gate-source voltage total power dissipation drain current Tmb = 25 °C; Fig. 1 Tmb = 25 °C; VGS = 5 V; Fig. 2; Fig. 3 Tmb = 100 °C; VGS = 5 V; Fig. 2 BUK9277-55A All information provided in this document is subject to legal disclaimers. Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Min -15 - Max 55 55 15 51 18 13 Unit V V V W A A © NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 12 June 2014 2 / 13 NXP Semiconductors BUK9277-55A N-channel TrenchMOS logic level FET Symbol IDM Tstg Tj IS ISM EDS(AL)S EDS(AL)R Parameter peak drain current storage temperature junction temperature Conditions Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 3 Min -55 -55 Max 73 175 175 Unit A °C °C Source-drain diode source current peak source current Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C ID = 18 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped Fig. 4 [1][2][3][4] - - 18 73 A A Avalanche ruggedness non-repetitive drain-source avalanche energy repetitive drain-source avalanche energy [1] [2] [3] [4] 120 Pder (%) 80 - 33 - mJ J Maximum value not quoted. Repetitive rating defined in avalanche rating figure. Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Repetitive avalanche rating limited by an average junction temperature of 170 °C. Refer to application note AN10273 for further information. 03aa16 20 ID (A) 15 003aab510 10 40 5 0 0 50 100 150 Tmb (°C) 200 0 0 50 100 150 Tmb (°C) 200 Fig. 1. Normalized total power dissipation as a function of mounting base temperature Fig. 2. Continuous drain current as a function of mounting base temperature BUK9277-55A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 12 June 2014 3 / 13 NXP Semiconductors BUK9277-55A N-channel TrenchMOS logic level FET 102 ID (A) 10 Limit RDSon = V DS / ID 003aab511 10 µs 100 µs 1 ms DC 10 ms 100 ms 1 10-1 1 10 VDS (V) 102 Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 102 IAL (A) 10 (1) 003aab531 (2) 1 (3) 10-1 10-2 10-3 10-2 10-1 1 t (ms) 10 AL Fig. 4. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time 9. Thermal characteristics Table 6. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base Conditions Min Typ Max 2.93 Unit K/W BUK9277-55A All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 12 June 2014 4 / 13 NXP Semiconductors BUK9277-55A N-channel TrenchMOS logic level FET Symbol Rth(j-a) Parameter the.


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