Document
BUK9277-55A
12 June 2014
DP AK
N-channel TrenchMOS logic level FET
Product data sheet
1. General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
2. Features and benefits
• • •
Q101 compliant Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
3. Applications
• • •
12 V and 24 V loads Automotive and general purpose power switching Motors, lamps and solenoids
4. Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; Fig. 2; Fig. 3 Tmb = 25 °C; Fig. 1 VGS = 10 V; ID = 10 A; Tj = 25 °C VGS = 4.5 V; ID = 10 A; Tj = 25 °C VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 13 Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy ID = 18 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped 33 mJ Min Typ Max 55 18 51 Unit V A W
Static characteristics drain-source on-state resistance 59 65 69 86 77 mΩ mΩ mΩ
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NXP Semiconductors
BUK9277-55A
N-channel TrenchMOS logic level FET
5. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain
2 1 3
Simplified outline
mb
Graphic symbol
D
G
mbb076
S
DPAK (SOT428)
6. Ordering information
Table 3. Ordering information Package Name BUK9277-55A BUK9277-55A/CD DPAK DPAK Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) Version SOT428 SOT428 Type number
7. Marking
Table 4. Marking codes Marking code BUK9277-55A Type number BUK9277-55A BUK9277-55A/CD
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS Ptot ID Parameter drain-source voltage drain-gate voltage gate-source voltage total power dissipation drain current Tmb = 25 °C; Fig. 1 Tmb = 25 °C; VGS = 5 V; Fig. 2; Fig. 3 Tmb = 100 °C; VGS = 5 V; Fig. 2
BUK9277-55A All information provided in this document is subject to legal disclaimers.
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ
Min -15 -
Max 55 55 15 51 18 13
Unit V V V W A A
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
12 June 2014
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NXP Semiconductors
BUK9277-55A
N-channel TrenchMOS logic level FET
Symbol IDM Tstg Tj IS ISM EDS(AL)S EDS(AL)R
Parameter peak drain current storage temperature junction temperature
Conditions Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 3
Min -55 -55
Max 73 175 175
Unit A °C °C
Source-drain diode source current peak source current Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C ID = 18 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped Fig. 4
[1][2][3][4] -
-
18 73
A A
Avalanche ruggedness non-repetitive drain-source avalanche energy repetitive drain-source avalanche energy
[1] [2] [3] [4]
120 Pder (%) 80
-
33 -
mJ J
Maximum value not quoted. Repetitive rating defined in avalanche rating figure. Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Repetitive avalanche rating limited by an average junction temperature of 170 °C. Refer to application note AN10273 for further information.
03aa16
20 ID (A) 15
003aab510
10
40
5
0
0
50
100
150
Tmb (°C)
200
0
0
50
100
150
Tmb (°C)
200
Fig. 1.
Normalized total power dissipation as a function of mounting base temperature
Fig. 2.
Continuous drain current as a function of mounting base temperature
BUK9277-55A
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
12 June 2014
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NXP Semiconductors
BUK9277-55A
N-channel TrenchMOS logic level FET
102 ID (A) 10 Limit RDSon = V DS / ID
003aab511
10 µs
100 µs 1 ms DC 10 ms 100 ms
1
10-1
1
10
VDS (V)
102
Fig. 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
102 IAL (A) 10
(1)
003aab531
(2)
1
(3)
10-1
10-2 10-3
10-2
10-1
1 t (ms) 10 AL
Fig. 4.
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
9. Thermal characteristics
Table 6. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base Conditions Min Typ Max 2.93 Unit K/W
BUK9277-55A
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© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
12 June 2014
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NXP Semiconductors
BUK9277-55A
N-channel TrenchMOS logic level FET
Symbol Rth(j-a)
Parameter the.