BUK9516-55A

TO -22 0A B BUK9516-55A N-channel TrenchMOS logic level FET Rev. 02 — 21 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ AEC Q101 compliant „ Low conduction losses due to low on-state resistance 1.3 Applications „ Automotive and general purpose power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 49 A; Vsup ≤ 25 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped 120 mJ Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C Min Typ 10 Max Unit 55 66 138 15 V A W mΩ mΩ Static characteristics 12.5 16 NXP Semiconductors BUK9516-55A N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain mbb076 Simplified outline mb Graphic symbol D G S 1 2 3 SOT78A (TO-220AB) 3. Ordering information Table 3. Ordering information Package Name BUK9516-55A TO-220AB Description plastic single-e...