Document
Power Transistors
2SC3611
Silicon NPN epitaxial planar type
For video amplifier
8.0+–00..15
Unit: mm
3.2±0.2
■ Features
φ 3.16±0.1
3.8±0.3 11.0±0.5
3.05±0.1
• High transition frequency fT • Small collector output capacitance (Common base, input open cir-
cuited) Cob • Wide current range • TO-126B package which requires no insulation plate for installa-
tion to the heat sink
1.9±0.1 16.0±1.0
/ ■ Absolute Maximum Ratings Ta = 25°C
e e) Parameter
Symbol Rating
Unit
c e. d typ Collector-base voltage (Emitter open) VCBO
110
V
n d stag tinue Collector-emitter voltage
le n (Resistor between B and E)
VCER
100
V
a elifecyc disco Collector-emitter voltage (Base open) VCEO
50
V
n u t ed, Emitter-base voltage (Collector open) VEBO
3.5
V
roduc d typ Collector current
IC
150
mA
te tin ur P tinue Peak collector current
ICP
300
mA
g fo con Collector power dissipation
PC
1.2
W
win dis 4.0 *
in n follo ned Junction temperature
des , pla Storage temperature
Tj
150
°C
Tstg −55 to +150 °C
a o inclu type Note) *: With a 100 × 100 × 2 mm Al heat sink
M isccontinueindtenance ■ Electrical Characteristics Ta = 25°C ± 3°C
/Dis ma Parameter
Symbol
Conditions
D ance type, Collector-base voltage (Emitter open)
ten ce Collector-emitter voltage ain nan (Resistor between B and E)
VCBO VCER
IC = 100 µA, IE = 0 IC = 500 µA, RBE = 470 Ω
M inte Collector-emitter voltage (Base open) ma Emitter-base voltage (Collector open) (planed Collector-emitter cutoff current (Base open)
VCEO VEBO ICEO
IC = 1 mA, IB = 0 IE = 100 µA, IC = 0 VCE = 35 V, IB = 0
0.75±0.1
0.5±0.1
4.6±0.2 2.3±0.2
0.5±0.1
1.76±0.1
123
1: Emitter 2: Collector 3: Base TO-126B-A1 Package
Min Typ Max Unit
110
V
100
V
50
V
3.5
V
10
µA
Forward current transfer ratio
hFE VCE = 5 V, IC = 100 mA
20
Collector-emitter saturation voltage
VCE(sat) IC = 150 mA, IB = 15 mA
0.5
V
Transition frequency
fT1 VCB = 10 V, IE = −10 mA, f = 200 MHz
300
MHz
fT2 VCB = 10 V, IE = −110 mA, f = 200 MHz
350
Collector output capacitance (Common base, input open circuited)
Cob VCB = 30 V, IE = 0, f = 1 MHz
3
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
SJD00108BED
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2SC3611
Collector power dissipation PC (W)
Collector-emitter saturation voltage VCE(sat) (V)
5 (1)
4
PC Ta
(1)With a 100×100×2mm Al heat sink
(2)Without heat sink
IC VCE
240
120
TC=25˚C
200
100 IB=5.0mA
IC VBE
VCE=5V TC=100˚C 25˚C
Collector current IC (mA)
Collector current IC (mA)
4.5mA
–25˚C
160
4.0mA
80
3
3.5mA
120
3.0mA
60
2.5mA
2
80
2.0mA
40
(2)
1.5mA
1
0 0 40 80 120 160 200 240 Ambient temperature Ta (°C)
40
1.0mA
0.5mA
0 0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
20
0 0 0.2 0.4 0.6 0.8 1.0
Base-emitter voltage VBE (V)
e/ pe) VCE(sat) IC c e. d ty IC/IB=5
n d tag ue 10
Transition frequency fT (MHz)
Forward current transfer ratio hFE
na uet lifecyceled,sdiscontin 1
te tin four Proondtiuncued typ 0.1 TC=100˚C ing isc –25˚C in n llow dd 25˚C
des fo , plane 0.01
a codinclu etype 1
10
100
Collector current IC (mA)
10 000 1 000
100 10
hFE IC
VCE=5V
25˚C TC=100˚C
–25˚C
1
0.1
1
10
100
Collector current IC (mA)
fT IE
600 VCB=10V f=200MHz TC=25˚C
500
400
300
200
100
0
−1
−10
−100
−1 000
Emitter current IE (mA)
M is/Discontimnuaeintenanc Cob VCB
Safe operation area
e e, 6
1 000
c p IE=0
Single pulse
D an ty f=1MHz
TC=25˚C
n e TC=25˚C
ICP
inte nc 5
a t=10ms
Ma ten100 IC
in 4
t=100ms t=1s
(planed ma 3
10
Collector current IC (mA)
2
1 1
0
1
10
100
Collector-base voltage VCB (V)
0.1
1
10
100
1 000
Collector-emitter voltage VCE (V)
(pF)
Cob
Collector output capacitance (Common base, input open circuited)
2
SJD00108BED
Thermal resistance Rth (°C/W)
2SC3611
Rth t
104 free air
103
102
10
1 10−1
10−4
10−3
10−2
10−1
1
10
102
103
104
Time t (s)
MaDinistecnoanntincuee/ d (planeMdaminatiennteannacnec/Deitsycpoen,timnuaeindteinncalnucdeestyfpoell,opwlianngefdoudrisPcroondtiuncutelidfetcyypceled,sdtaisgceo.ntinued type)
SJD00108BED
3
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