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C3611 Dataheets PDF



Part Number C3611
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description 2SC3611
Datasheet C3611 DatasheetC3611 Datasheet (PDF)

Power Transistors 2SC3611 Silicon NPN epitaxial planar type For video amplifier 8.0+–00..15 Unit: mm 3.2±0.2 ■ Features φ 3.16±0.1 3.8±0.3 11.0±0.5 3.05±0.1 • High transition frequency fT • Small collector output capacitance (Common base, input open cir- cuited) Cob • Wide current range • TO-126B package which requires no insulation plate for installa- tion to the heat sink 1.9±0.1 16.0±1.0 / ■ Absolute Maximum Ratings Ta = 25°C e e) Parameter Symbol Rating Unit c e. d typ Collect.

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Power Transistors 2SC3611 Silicon NPN epitaxial planar type For video amplifier 8.0+–00..15 Unit: mm 3.2±0.2 ■ Features φ 3.16±0.1 3.8±0.3 11.0±0.5 3.05±0.1 • High transition frequency fT • Small collector output capacitance (Common base, input open cir- cuited) Cob • Wide current range • TO-126B package which requires no insulation plate for installa- tion to the heat sink 1.9±0.1 16.0±1.0 / ■ Absolute Maximum Ratings Ta = 25°C e e) Parameter Symbol Rating Unit c e. d typ Collector-base voltage (Emitter open) VCBO 110 V n d stag tinue Collector-emitter voltage le n (Resistor between B and E) VCER 100 V a elifecyc disco Collector-emitter voltage (Base open) VCEO 50 V n u t ed, Emitter-base voltage (Collector open) VEBO 3.5 V roduc d typ Collector current IC 150 mA te tin ur P tinue Peak collector current ICP 300 mA g fo con Collector power dissipation PC 1.2 W win dis 4.0 * in n follo ned Junction temperature des , pla Storage temperature Tj 150 °C Tstg −55 to +150 °C a o inclu type Note) *: With a 100 × 100 × 2 mm Al heat sink M isccontinueindtenance ■ Electrical Characteristics Ta = 25°C ± 3°C /Dis ma Parameter Symbol Conditions D ance type, Collector-base voltage (Emitter open) ten ce Collector-emitter voltage ain nan (Resistor between B and E) VCBO VCER IC = 100 µA, IE = 0 IC = 500 µA, RBE = 470 Ω M inte Collector-emitter voltage (Base open) ma Emitter-base voltage (Collector open) (planed Collector-emitter cutoff current (Base open) VCEO VEBO ICEO IC = 1 mA, IB = 0 IE = 100 µA, IC = 0 VCE = 35 V, IB = 0 0.75±0.1 0.5±0.1 4.6±0.2 2.3±0.2 0.5±0.1 1.76±0.1 123 1: Emitter 2: Collector 3: Base TO-126B-A1 Package Min Typ Max Unit 110 V 100 V 50 V 3.5 V 10 µA Forward current transfer ratio hFE VCE = 5 V, IC = 100 mA 20  Collector-emitter saturation voltage VCE(sat) IC = 150 mA, IB = 15 mA 0.5 V Transition frequency fT1 VCB = 10 V, IE = −10 mA, f = 200 MHz 300 MHz fT2 VCB = 10 V, IE = −110 mA, f = 200 MHz 350 Collector output capacitance (Common base, input open circuited) Cob VCB = 30 V, IE = 0, f = 1 MHz 3 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: January 2003 SJD00108BED 1 2SC3611 Collector power dissipation PC (W) Collector-emitter saturation voltage VCE(sat) (V) 5 (1) 4 PC  Ta (1)With a 100×100×2mm Al heat sink (2)Without heat sink IC  VCE 240 120 TC=25˚C 200 100 IB=5.0mA IC  VBE VCE=5V TC=100˚C 25˚C Collector current IC (mA) Collector current IC (mA) 4.5mA –25˚C 160 4.0mA 80 3 3.5mA 120 3.0mA 60 2.5mA 2 80 2.0mA 40 (2) 1.5mA 1 0 0 40 80 120 160 200 240 Ambient temperature Ta (°C) 40 1.0mA 0.5mA 0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) 20 0 0 0.2 0.4 0.6 0.8 1.0 Base-emitter voltage VBE (V) e/ pe) VCE(sat)  IC c e. d ty IC/IB=5 n d tag ue 10 Transition frequency fT (MHz) Forward current transfer ratio hFE na uet lifecyceled,sdiscontin 1 te tin four Proondtiuncued typ 0.1 TC=100˚C ing isc –25˚C in n llow dd 25˚C des fo , plane 0.01 a codinclu etype 1 10 100 Collector current IC (mA) 10 000 1 000 100 10 hFE  IC VCE=5V 25˚C TC=100˚C –25˚C 1 0.1 1 10 100 Collector current IC (mA) fT  IE 600 VCB=10V f=200MHz TC=25˚C 500 400 300 200 100 0 −1 −10 −100 −1 000 Emitter current IE (mA) M is/Discontimnuaeintenanc Cob  VCB Safe operation area e e, 6 1 000 c p IE=0 Single pulse D an ty f=1MHz TC=25˚C n e TC=25˚C ICP inte nc 5 a t=10ms Ma ten100 IC in 4 t=100ms t=1s (planed ma 3 10 Collector current IC (mA) 2 1 1 0 1 10 100 Collector-base voltage VCB (V) 0.1 1 10 100 1 000 Collector-emitter voltage VCE (V) (pF) Cob Collector output capacitance (Common base, input open circuited) 2 SJD00108BED Thermal resistance Rth (°C/W) 2SC3611 Rth  t 104 free air 103 102 10 1 10−1 10−4 10−3 10−2 10−1 1 10 102 103 104 Time t (s) MaDinistecnoanntincuee/ d (planeMdaminatiennteannacnec/Deitsycpoen,timnuaeindteinncalnucdeestyfpoell,opwlianngefdoudrisPcroondtiuncutelidfetcyypceled,sdtaisgceo.ntinued type) SJD00108BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our compa.


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