2SC3503. C3503 Datasheet

C3503 2SC3503. Datasheet pdf. Equivalent


Part C3503
Description 2SC3503
Feature Ordering number:EN1426B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1381/2SC3503 High-Definiti.
Manufacture Sanyo Semicon Device
Datasheet
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Ordering number:EN1426B PNP/NPN Epitaxial Planar Silicon Tr C3503 Datasheet
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C3503
Ordering number:EN1426B
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1381/2SC3503
High-Definition CRT Display,
Video Output Applications
Features
· High breakdown voltage : VCEO300V.
· Small reverse transfer capacitance and excellent high
frequency characteristic
: Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V.
· Adoption of MBIT process.
Package Dimensions
unit:mm
2009A
[2SA1381/2SC3503]
JEDEC : TO-126
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCB=(–)200V, IE=0
VEB=(–)4V, IC=0
VCE=(–)10V, IC=(–)10mA
VCE=(–)30V, IC=(–)10mA
VCB=(–)30V, f=1MHz
Reverse Transfer Capacitance
Cre VCB=(–)30V, f=1MHz
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Base-to-Emitter Breakdown Votage
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=(–)20mA, IB=(–)2mA
IC=(–)20mA, IB=(–)2mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=
IE=(–)10µA, IC=0
* : The 2SA1381/2SC3503 are classified by 10mA hFE as follows :
40 C 80 60 D 120 100 E 200 160 F 320
B : Base
C : Collector
E : Emitter
Ratings
(–)300
(–)300
(–)5
(–)100
(–)200
1.2
7
150
–55 to +150
Unit
V
V
V
mA
mA
W
W
˚C
˚C
Ratings
min typ
40*
150
2.6
(3.1)
1.8
(2.3)
(–)300
(–)300
(–)5
max
(–)0.1
(–)0.1
320*
(–)0.6
(–)1.0
Unit
µA
µA
MHz
pF
pF
pF
pF
V
V
V
V
V
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/3107KI/D134MW, TS No.1426-1/4



C3503
2SA1381/2SC3503
No.1426-2/4







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