BUK7Y28-75B
N-channel TrenchMOS standard level FET
Rev. 04 — 7 April 2010 Product data sheet
1. Product profile
1.1 Gen...
BUK7Y28-75B
N-channel TrenchMOS standard level FET
Rev. 04 — 7 April 2010 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Q101 compliant Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads Automotive systems DC-to-DC converters Engine management General purpose power switching Solenoid drivers Transmission control
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 4 Tmb = 25 °C; see Figure 2 Min Typ Max Unit 75 V
35.5 A 85 W
Static characteristics RDSon VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 12; see Figure 13 23 28 mΩ
NXP Semiconductors
BUK7Y28-75B
N-channel TrenchMOS standard level FET
Quick reference data …continued Parameter Conditions Min Typ Max Unit 75 mJ
Table 1. Symbol EDS(AL)S
Avalanche ruggedness non-repetitive ID = 35.5 A; Vsup ≤ 75 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C...