D2 PA K
BUK9606-75B
N-channel TrenchMOS logic level FET
Rev. 4 — 20 July 2011 Product data sheet
1. Product profile
1....
D2 PA K
BUK9606-75B
N-channel TrenchMOS logic level FET
Rev. 4 — 20 July 2011 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads Automotive systems General purpose power switching Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12
[1]
Min -
Typ 4.7 5.2
Max 75 75 300 5.5 6.1
Unit V A W mΩ mΩ
Static characteristics
NXP Semiconductors
BUK9606-75B
N-channel TrenchMOS logic level FET
Quick reference data …continued Parameter non-repetitive drain-source avalanche energy gate-drain charge Conditions ID = 75 A; Vsup ≤ 75 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped VGS = 5 V; ID = 25 A; VDS = ...