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BUK7606-75B Dataheets PDF



Part Number BUK7606-75B
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-channel TrenchMOS logic level FET
Datasheet BUK7606-75B DatasheetBUK7606-75B Datasheet (PDF)

D2 PA K BUK7606-75B N-channel TrenchMOS standard level FET Rev. 03 — 3 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  AEC Q101 compliant  Low conduction losses due to low on-state resistance  Sui.

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D2 PA K BUK7606-75B N-channel TrenchMOS standard level FET Rev. 03 — 3 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  AEC Q101 compliant  Low conduction losses due to low on-state resistance  Suitable for standard level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications  12 V, 24 V and 42 V loads  Automotive systems  General purpose power switching  Motors, lamps and solenoids 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 [1] Min - Typ - Max Unit 75 75 300 V A W Static characteristics RDSon VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 4.8 5.6 mΩ NXP Semiconductors BUK7606-75B N-channel TrenchMOS standard level FET Quick reference data …continued Parameter Conditions Min Typ Max Unit 852 mJ Table 1. Symbol EDS(AL)S Avalanche ruggedness non-repetitive ID = 75 A; Vsup ≤ 75 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped gate-drain charge VGS = 10 V; ID = 25 A; VDS = 60 V; Tj = 25 °C; see Figure 13 Dynamic characteristics QGD 28 nC [1] Continuous current is limited by package. 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain[1] source mounting base; connected to drain 2 1 3 mb D Simplified outline Graphic symbol G mbb076 S SOT404 (D2PAK) [1] It is not possible to make connection to pin 2. 3. Ordering information Table 3. Ordering information Package Name BUK7606-75B D2PAK Description Version plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) Type number BUK7606-75B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 03 — 3 February 2011 2 of 13 NXP Semiconductors BUK7606-75B N-channel TrenchMOS standard level FET 4. Limiting values Table 4. Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 100 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 IDM Ptot Tstg Tj IS ISM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature source current peak source current non-repetitive drain-source avalanche energy Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C ID = 75 A; Vsup ≤ 75 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped [2] [1] [1] [2] [1] In accordance with the Absolute Maximum Rating System (IEC 60134). Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Min -20 -55 -55 Max 75 75 20 75 159 75 638 300 175 175 159 75 638 852 Unit V V V A A A A W °C °C A A A mJ Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 Tmb = 25 °C; see Figure 2 Source-drain diode Avalanche ruggedness [1] [2] Continuous current is limited by package. Current is limited by power dissipation chip rating. ID 180 (A) 160 140 120 100 80 60 40 20 0 Capped at 75 A due to package 03ng89 120 Pder (%) 80 03na19 40 25 50 75 100 125 150 175 200 Tmb (°C) 0 0 50 100 150 Tmb (°C) 200 Fig 1. Normalized continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature © NXP B.V. 2011. All rights reserved. BUK7606-75B All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 03 — 3 February 2011 3 of 13 NXP Semiconductors BUK7606-75B N-channel TrenchMOS standard level FET 103 ID (A) 102 Limit RDSon = VDS/ID 03ng87 tp = 10 μs 100 μs Capped at 75 A due to package 1 ms DC 10 10 ms 100 ms 1 10−1 1 10 VDS (V) 102 Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions see Figure 4 mounted on a printed-circuit board; minimum footprint Min Typ 50 Max 0.5 Unit K/W K/W 1 Zth(j-mb) (K/W) 10−1 03ng88 δ = 0.5 0.2 0.1 0.05 10−2 0.02 P δ= tp T single shot tp t T 10−3 10−6 10−5 10−4 10−3 10−2 10−1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7606-75B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 03.


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