Document
D2 PA K
BUK7606-75B
N-channel TrenchMOS standard level FET
Rev. 03 — 3 February 2011 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant Low conduction losses due to low on-state resistance Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads Automotive systems General purpose power switching Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2
[1]
Min -
Typ -
Max Unit 75 75 300 V A W
Static characteristics RDSon VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 4.8 5.6 mΩ
NXP Semiconductors
BUK7606-75B
N-channel TrenchMOS standard level FET
Quick reference data …continued Parameter Conditions Min Typ Max Unit 852 mJ
Table 1. Symbol EDS(AL)S
Avalanche ruggedness non-repetitive ID = 75 A; Vsup ≤ 75 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped gate-drain charge VGS = 10 V; ID = 25 A; VDS = 60 V; Tj = 25 °C; see Figure 13
Dynamic characteristics QGD 28 nC
[1]
Continuous current is limited by package.
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain[1] source mounting base; connected to drain
2 1 3 mb
D
Simplified outline
Graphic symbol
G
mbb076
S
SOT404 (D2PAK)
[1] It is not possible to make connection to pin 2.
3. Ordering information
Table 3. Ordering information Package Name BUK7606-75B D2PAK Description Version plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) Type number
BUK7606-75B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 03 — 3 February 2011
2 of 13
NXP Semiconductors
BUK7606-75B
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 100 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 IDM Ptot Tstg Tj IS ISM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature source current peak source current non-repetitive drain-source avalanche energy Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C ID = 75 A; Vsup ≤ 75 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped
[2] [1] [1] [2] [1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Min -20 -55 -55 Max 75 75 20 75 159 75 638 300 175 175 159 75 638 852 Unit V V V A A A A W °C °C A A A mJ
Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 Tmb = 25 °C; see Figure 2
Source-drain diode
Avalanche ruggedness
[1] [2]
Continuous current is limited by package. Current is limited by power dissipation chip rating.
ID 180 (A) 160 140 120 100 80 60 40 20 0 Capped at 75 A due to package
03ng89
120 Pder (%) 80
03na19
40
25
50
75
100
125
150
175 200 Tmb (°C)
0
0
50
100
150
Tmb (°C)
200
Fig 1.
Normalized continuous drain current as a function of mounting base temperature
Fig 2.
Normalized total power dissipation as a function of mounting base temperature
© NXP B.V. 2011. All rights reserved.
BUK7606-75B
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 03 — 3 February 2011
3 of 13
NXP Semiconductors
BUK7606-75B
N-channel TrenchMOS standard level FET
103 ID (A) 102 Limit RDSon = VDS/ID
03ng87
tp = 10 μs
100 μs Capped at 75 A due to package 1 ms DC 10 10 ms 100 ms
1
10−1
1
10 VDS (V)
102
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions see Figure 4 mounted on a printed-circuit board; minimum footprint Min Typ 50 Max 0.5 Unit K/W K/W
1 Zth(j-mb) (K/W) 10−1
03ng88
δ = 0.5 0.2 0.1 0.05
10−2
0.02
P
δ=
tp T
single shot
tp t T
10−3
10−6
10−5
10−4
10−3
10−2
10−1 tp (s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7606-75B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 03.