BUK6610-75C

BUK6610-75C N-channel TrenchMOS FET Rev. 02 — 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits „ AEC Q101 compliant „ Suitable for intermediate level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V Automotive systems „ Electric and electro-hydraulic power steering „ EngineMotors, lamps and solenoid control management „ Start-Stop micro-hybrid applications „ Transmission control „ Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11 Min Typ 8.6 Max Unit 75 78 158 10 V A W mΩ Static characteristics NXP Semiconductors BUK6610-75C N-channel TrenchMOS FET Quick reference data …continued Parameter Conditions Min Typ Max Unit 121 mJ Table 1. Symbol EDS(AL)S Avalanche ruggedness non-repetitive ID = 78 A; Vsup ≤ 75 V; drain-source avalanche RGS = 50 Ω; VGS = 10 V; Tj(init) =...