BUK6610-75C
N-channel TrenchMOS FET
Rev. 02 — 14 October 2010 Product data sheet
1. Product profile
1.1 General descrip...
BUK6610-75C
N-channel TrenchMOS FET
Rev. 02 — 14 October 2010 Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant Suitable for intermediate level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V Automotive systems Electric and electro-hydraulic power steering EngineMotors, lamps and solenoid control management Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11 Min Typ 8.6 Max Unit 75 78 158 10 V A W mΩ
Static characteristics
NXP Semiconductors
BUK6610-75C
N-channel TrenchMOS FET
Quick reference data …continued Parameter Conditions Min Typ Max Unit 121 mJ
Table 1. Symbol EDS(AL)S
Avalanche ruggedness non-repetitive ID = 78 A; Vsup ≤ 75 V; drain-source avalanche RGS = 50 Ω; VGS = 10 V; Tj(init) =...