D2 PA K
BUK7613-75B
N-channel TrenchMOS standard level FET
Rev. 3 — 27 December 2011 Product data sheet
1. Product pro...
D2 PA K
BUK7613-75B
N-channel TrenchMOS standard level FET
Rev. 3 — 27 December 2011 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low on-state resistance Q101 compliant Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads Automotive systems General purpose power switching Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance gate-drain charge Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 VGS = 10 V; ID = 25 A; VDS = 60 V; Tj = 25 °C; see Figure 13 ID = 75 A; Vsup ≤ 75 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped Min Typ 11.7 Max 75 75 157 13 Unit V A W mΩ
Static characteristics
Dynamic characteristics QGD 15 nC
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 125 mJ
NXP Semiconductors
BUK7613-75B
N-channel TrenchMOS standa...