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BUK6211-75C Dataheets PDF



Part Number BUK6211-75C
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-channel TrenchMOS FET
Datasheet BUK6211-75C DatasheetBUK6211-75C Datasheet (PDF)

BUK6211-75C N-channel TrenchMOS FET Rev. 02 — 28 September 2010 Product data sheet 1. Product profile 1.1 General description Standard and logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits „ AEC Q101 compliant „ Suitable for intermediate level gate .

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BUK6211-75C N-channel TrenchMOS FET Rev. 02 — 28 September 2010 Product data sheet 1. Product profile 1.1 General description Standard and logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits „ AEC Q101 compliant „ Suitable for intermediate level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V Automotive systems „ Electric and electro-hydraulic power steering „ Engine management „ Motors, lamps and solenoid control „ Start-Stop micro-hybrid applications „ Transmission control „ Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Min Typ 9.3 Max Unit 75 74 158 11 V A W mΩ total power dissipation Tmb = 25 °C; see Figure 2 drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11 Static characteristics NXP Semiconductors BUK6211-75C N-channel TrenchMOS FET Quick reference data …continued Parameter non-repetitive drain-source avalanche energy gate-drain charge Conditions ID = 74 A; Vsup ≤ 75 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped ID = 25 A; VDS = 60 V; VGS = 10 V; see Figure 13; see Figure 14 Min Typ Max Unit 127 mJ Table 1. Symbol EDS(AL)S Avalanche ruggedness Dynamic characteristics QGD 30 nC 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain 2 1 3 mb D Simplified outline Graphic symbol G mbb076 S SOT428 (DPAK) 3. Ordering information Table 3. Ordering information Package Name BUK6211-75C DPAK Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) Version SOT428 Type number BUK6211-75C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 28 September 2010 2 of 15 NXP Semiconductors BUK6211-75C N-channel TrenchMOS FET 4. Limiting values Table 4. Symbol VDS VGS ID IDM Ptot Tstg Tj IS ISM EDS(AL)S EDS(AL)R Limiting values Parameter drain-source voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source current peak source current non-repetitive drain-source avalanche energy repetitive drain-source avalanche energy Tmb = 25 °C tp ≤ 10 µs; pulsed; Tmb = 25 °C ID = 74 A; Vsup ≤ 75 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped [3][4][5] In accordance with the Absolute Maximum Rating System (IEC 60134). Conditions Tj ≥ 25 °C; Tj ≤ 175 °C DC Pulsed Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 100 °C; VGS = 10 .


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