BUK9217-75B

DP AK BUK9217-75B N-channel TrenchMOS logic level FET Rev. 02 — 3 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ AEC Q101 compliant „ Low conduction losses due to low on-state resistance „ Suitable for logic level gate drive sources „ Suitable for thermally demanding environments due to 185 °C rating 1.3 Applications „ 12 V, 24 V and 42 V loads „ Automotive systems „ General purpose power switching „ Motors, lamps and solenoids 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 185 °C VGS = 5 V; Tmb = 25 °C; see Figure 1; see Figure 3 Min Typ Max Unit 75 64 167 V A W mΩ mΩ total power dissipation Tmb = 25 °C; see Figure 2 drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 10; see Figure 11 ID = 64 A; Vsup ≤ 75 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped VGS = 5 V; ID = 25 A; VDS = 60 V; Tj = 25 °C; see Figure 12 Static characteristics 13.4 15 14.4 17 Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy gate-drain charge 147 mJ Dynamic characteristics QGD 14 nC NXP Semiconductors BUK...