BUK7226-75A

BUK7226-75A N-channel TrenchMOS standard level FET Rev. 02 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features „ 175 °C rated „ Q101 compliant „ Low on-state resistance „ Standard level compatible 1.3 Applications „ 12 V, 24 V and 42 V loads „ General purpose power switching „ Automotive systems „ Motors, lamps and solenoids 1.4 Quick reference data Table 1. VDS ID Ptot Tj RDSon Quick reference Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 and 4 Tmb = 25 °C; see Figure 2 [1] Symbol Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance Min -55 Typ 22 Max 75 45 158 175 26 Unit V A W °C mΩ Static characteristics VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 and 13 - Avalanche ruggedness EDS(AL)S non-repetitive ID = 45 A; Vsup ≤ 75 V; drain-source avalanche RGS = 50 Ω; VGS = 10 V; energy Tj(init) = 25 °C; unclamped inductive load [1] Capped at 45 A due to bondwire. - - 215 mJ NXP Semiconductors BUK7226-75A N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning Symbol G D S D Description gate drain source mounting...