Document
BUK7226-75A
N-channel TrenchMOS standard level FET
Rev. 02 — 22 February 2008 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features
175 °C rated Q101 compliant Low on-state resistance Standard level compatible
1.3 Applications
12 V, 24 V and 42 V loads General purpose power switching Automotive systems Motors, lamps and solenoids
1.4 Quick reference data
Table 1. VDS ID Ptot Tj RDSon Quick reference Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 and 4 Tmb = 25 °C; see Figure 2
[1]
Symbol Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance
Min -55
Typ 22
Max 75 45 158 175 26
Unit V A W °C mΩ
Static characteristics VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 and 13 -
Avalanche ruggedness EDS(AL)S non-repetitive ID = 45 A; Vsup ≤ 75 V; drain-source avalanche RGS = 50 Ω; VGS = 10 V; energy Tj(init) = 25 °C; unclamped inductive load
[1] Capped at 45 A due to bondwire.
-
-
215
mJ
NXP Semiconductors
BUK7226-75A
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning Symbol G D S D Description gate drain source mounting base; connected to drain
2 1 3
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
SOT428 (DPAK)
3. Ordering information
Table 3. Ordering information Package Name BUK7226-75A DPAK Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) Version SOT428 Type number
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature ID = 45 A; Vsup ≤ 75 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped inductive load see Figure 3
[2][3] [4]
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Tmb = 25 °C; VGS = 10 V; see Figure 1 and 4 Tmb = 100 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; tp ≤ 10 μs; pulsed; see Figure 4 Tmb = 25 °C; see Figure 2
[1]
Min -20 -55 -55 -
Max 75 75 20 45 38 215 158 175 175 215
Unit V V V A A A W °C °C mJ
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy EDS(AL)R repetitive drain-source avalanche energy Source-drain diode IS ISM
[1]
-
-
J
source current peak source current
Capped at 45 A due to bondwire.
Tmb = 25 °C tp ≤ 10 μs; pulsed; Tmb = 25 °C
[1]
-
45 215
A A
BUK7226-75A_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 22 February 2008
2 of 13
NXP Semiconductors
BUK7226-75A
N-channel TrenchMOS sta.