DatasheetsPDF.com

BUK7226-75A Dataheets PDF



Part Number BUK7226-75A
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-channel TrenchMOS standard level FET
Datasheet BUK7226-75A DatasheetBUK7226-75A Datasheet (PDF)

BUK7226-75A N-channel TrenchMOS standard level FET Rev. 02 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features „ 175 °C rated „ Q101 compliant „ Low on-state resistance „ Stand.

  BUK7226-75A   BUK7226-75A



Document
BUK7226-75A N-channel TrenchMOS standard level FET Rev. 02 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features „ 175 °C rated „ Q101 compliant „ Low on-state resistance „ Standard level compatible 1.3 Applications „ 12 V, 24 V and 42 V loads „ General purpose power switching „ Automotive systems „ Motors, lamps and solenoids 1.4 Quick reference data Table 1. VDS ID Ptot Tj RDSon Quick reference Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 and 4 Tmb = 25 °C; see Figure 2 [1] Symbol Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance Min -55 Typ 22 Max 75 45 158 175 26 Unit V A W °C mΩ Static characteristics VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 and 13 - Avalanche ruggedness EDS(AL)S non-repetitive ID = 45 A; Vsup ≤ 75 V; drain-source avalanche RGS = 50 Ω; VGS = 10 V; energy Tj(init) = 25 °C; unclamped inductive load [1] Capped at 45 A due to bondwire. - - 215 mJ NXP Semiconductors BUK7226-75A N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning Symbol G D S D Description gate drain source mounting base; connected to drain 2 1 3 G mbb076 Simplified outline mb Graphic symbol D S SOT428 (DPAK) 3. Ordering information Table 3. Ordering information Package Name BUK7226-75A DPAK Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) Version SOT428 Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature ID = 45 A; Vsup ≤ 75 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped inductive load see Figure 3 [2][3] [4] Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Tmb = 25 °C; VGS = 10 V; see Figure 1 and 4 Tmb = 100 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; tp ≤ 10 μs; pulsed; see Figure 4 Tmb = 25 °C; see Figure 2 [1] Min -20 -55 -55 - Max 75 75 20 45 38 215 158 175 175 215 Unit V V V A A A W °C °C mJ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy EDS(AL)R repetitive drain-source avalanche energy Source-drain diode IS ISM [1] - - J source current peak source current Capped at 45 A due to bondwire. Tmb = 25 °C tp ≤ 10 μs; pulsed; Tmb = 25 °C [1] - 45 215 A A BUK7226-75A_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 22 February 2008 2 of 13 NXP Semiconductors BUK7226-75A N-channel TrenchMOS sta.


BUK9226-75A BUK7226-75A BUK6226-75C


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)