MOSFET
LF
BUK9Y153-100E
27 June 2014
PA K
56
N-channel 100 V, 153 mΩ logic level MOSFET in LFPAK56
Product data sheet
1. ...
Description
LF
BUK9Y153-100E
27 June 2014
PA K
56
N-channel 100 V, 153 mΩ logic level MOSFET in LFPAK56
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
3. Applications
12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching
4. Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 VGS = 5 V; ID = 2 A; Tj = 25 °C; Fig. 11 Min Typ Max 100 9.4 37 Unit V A W
Static characteristics drain-source on-state resistance gate-drain charge 122 153 mΩ
Dynamic characteristics QGD VGS = 5 V; ID = 2 A; VDS = 80 V; Tj = 25 °C; Fig. 13; Fig. 14 3.1 nC
Scan or click this QR code to view the latest information for this product
NXP Semiconductors
BUK9Y153-100E
N-channel 100 V, 153 mΩ logic level MOSFET in LFPAK56
5. Pinning information
Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source sour...
Similar Datasheet