Document
BUK7613-100E
5 October 2012
N-channel TrenchMOS standard level FET
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
1.2 Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard level gate with VGS(th) rating of greater than 1V at 175 °C 1.3 Applications • 12V, 24V and 48V Automotive systems • Motors, lamps and solenoid control • Start-Stop micro-hybrid applications • Transmission control • Ultra high performance power switching 1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 20 A; Tj = 25 °C; Fig. 11 VGS = 10 V; ID = 20 A; VDS = 80 V; Tj = 25 °C; Fig. 13; Fig. 14 25.4 35.6 nC Min Typ Max 100 72 182 Unit V A W
Static characteristics drain-source on-state resistance 10.2 13 mΩ
Dynamic characteristics QGD gate-drain charge
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NXP Semiconductors
BUK7613-100E
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain
2 1 3
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
D2PAK (SOT404)
3. Ordering information
Table 3. Ordering information Package Name BUK7613-100E D2PAK Description Version plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) Type number
4. Marking
Table 4. Marking codes Marking code BUK7613-100E Type number BUK7613-100E
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Tj ≤ 175 °C; DC Tmb = 25 °C; VGS = 10 V; Fig. 1 Tmb = 100 °C; VGS = 10 V; Fig. 1 IDM Ptot Tstg Tj
BUK7613-100E
Min -20 -55 -55
Max 100 100 20 72 51 288 182 175 175
Unit V V V A A A W °C °C
2 / 13
peak drain current total power dissipation storage temperature junction temperature
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4 Tmb = 25 °C; Fig. 2
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© NXP B.V. 2012. All rights reserved
Product data sheet
5 October 2012
NXP Semiconductors
BUK7613-100E
N-channel TrenchMOS standard level FET
Symbol IS ISM EDS(AL)S
Parameter source current peak source current
Conditions Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C ID = 72 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 3
Min -
Max 72 288
Unit A A
Source-dra.