BUK9615-100E

BUK9615-100E 13 February 2014 D2 PA K N-channel TrenchMOS logic level FET Product data sheet 1. General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits AEC Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with Vgst(th) rating of greater than 0.5V at 175 °C 3. Applications 12V, 24V and 48V Automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 3 VGS = 5 V; ID = 15 A; Tj = 25 °C; Fig. 11 Min Typ Max 100 66 182 Unit V A W Static characteristics drain-source on-state resistance gate-drain charge 12.5 15 mΩ Dynamic characteristics QGD VGS = 5 V; ID = 15 A; VDS = 80 V; Fig. 13; Fig. 14 23 nC Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK9615-100E N-channel TrenchMOS logic level FET 5. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to ...