BUK9615-100A

D2 PA K BUK9615-100A N-channel TrenchMOS logic level FET Rev. 3 — 19 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ AEC Q101 compliant „ Low conduction losses due to low on-state resistance 1.3 Applications „ Automotive and general purpose power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain current total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 35 A; Vsup ≤ 25 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped 120 mJ Conditions Tmb = 25 °C Min -55 Typ 11.5 12 Max 100 75 230 175 14.4 15 Unit V A W °C mΩ mΩ drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C Static characteristics NXP Semiconductors BUK9615-100A N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain 2 1 3 mb D Simplified outline Graphic symbol G mbb076 S SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Package Name BUK9615-100A D2PAK...