TO -22 0A B
BUK7528-100A
N-channel TrenchMOS standard level FET
Rev. 2 — 26 April 2011 Product data sheet
1. Product p...
TO -22 0A B
BUK7528-100A
N-channel TrenchMOS standard level FET
Rev. 2 — 26 April 2011 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant Low conduction losses due to low on-state resistance
1.3 Applications
Automotive and general purpose power switching
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C Min Typ Ma x 20 47 Uni t A
100 V 166 W 28 mΩ
Static characteristics
Avalanche ruggedness EDS(AL)S non-repetitive ID = 30 A; Vsup ≤ 25 V; drain-source avalanche RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped energy 45 mJ
NXP Semiconductors
BUK7528-100A
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
1 2 3
SOT78A (TO-220AB)
3. Ordering information
Table 3. Ordering information Package Name BUK7528-100A TO-220AB Description plastic single-ended package; heatsink mounte...