BSS138PS

BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits „ „ „ „ Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications „ „ „ „ Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance Conditions Tamb = 25 °C Tamb = 25 °C Tamb = 25 °C; VGS = 10 V Tj = 25 °C; VGS = 10 V; ID = 300 mA [1] Min - Typ 0.9 Max 60 ±20 320 1.6 Unit V V mA Ω Per transistor [2] [1] [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. Pulse test: tp ≤ 300 μs; δ ≤ 0.01. NXP Semiconductors BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning Symbol S1 G1 D2 S2 G2 D1 Description source1 gate1 drain2 source2 gate2 drain1 1 2 3 S1 G1 S2 G2 Simplified outline 6 5 4 Graphic symbol D1 D2 msd901 3. Ordering information Table 3. Ordering information Package Name BSS138PS SC-88 Description plastic surface-mounted package; 6 leads Version SOT363 Type number 4. Marki...