Document
D2
PA K
PSMN4R4-80BS
N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK
Rev. 1 — 22 March 2012 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources
1.3 Applications
DC - DC converters Load switching Motor control Server power supplies
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 100 °C; see Figure 13; see Figure 6 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 6 Dynamic characteristics QGD QG(tot) EDS(AL)S gate-drain charge total gate charge non-repetitive drain-source avalanche energy VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14; see Figure 15 25 125 591 nC nC mJ Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2
[1]
Min -55 -
Typ 6.27 3.8
Max 80 100 306 175 7.4 4.5
Unit V A W °C mΩ mΩ
Static characteristics
Avalanche ruggedness VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 80 V; RGS = 50 Ω; unclamped
[1]
Continuous current is limited by package
NXP Semiconductors
PSMN4R4-80BS
N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain[1] source drain
mbb076
Simplified outline
mb
Graphic symbol
D
G S
2 1 3
SOT404 (D2PAK)
[1] It is not possible to make connection to pin 2
3. Ordering information
Table 3. Ordering information Package Name PSMN4R4-80BS D2PAK Description Version plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) Type number
4. Marking
Table 4. Marking codes Marking code PSMN4R4-80BS Type number PSMN4R4-80BS
PSMN4R4-80BS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 22 March 2012
2 of 15
NXP Semiconductors
PSMN4R4-80BS
N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK
5. Limiting values
Table 5. Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj Tsld(M) IS ISM EDS(AL)S Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature peak soldering temperature source current peak source current Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ VGS = 10 V; Tmb = 100 °C; see Figure 1 VGS = 10 V; Tmb = 25 °C; see Figure 1 pulsed; tp ≤ 10 µs; Tmb = 25 °C; see F.