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PSMN4R4-80BS Dataheets PDF



Part Number PSMN4R4-80BS
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description MOSFET
Datasheet PSMN4R4-80BS DatasheetPSMN4R4-80BS Datasheet (PDF)

D2 PA K PSMN4R4-80BS N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK Rev. 1 — 22 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction losses  Suitable for standard level gate drive sources 1.3 Applica.

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D2 PA K PSMN4R4-80BS N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK Rev. 1 — 22 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction losses  Suitable for standard level gate drive sources 1.3 Applications  DC - DC converters  Load switching  Motor control  Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 100 °C; see Figure 13; see Figure 6 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 6 Dynamic characteristics QGD QG(tot) EDS(AL)S gate-drain charge total gate charge non-repetitive drain-source avalanche energy VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14; see Figure 15 25 125 591 nC nC mJ Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min -55 - Typ 6.27 3.8 Max 80 100 306 175 7.4 4.5 Unit V A W °C mΩ mΩ Static characteristics Avalanche ruggedness VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 80 V; RGS = 50 Ω; unclamped [1] Continuous current is limited by package NXP Semiconductors PSMN4R4-80BS N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain[1] source drain mbb076 Simplified outline mb Graphic symbol D G S 2 1 3 SOT404 (D2PAK) [1] It is not possible to make connection to pin 2 3. Ordering information Table 3. Ordering information Package Name PSMN4R4-80BS D2PAK Description Version plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) Type number 4. Marking Table 4. Marking codes Marking code PSMN4R4-80BS Type number PSMN4R4-80BS PSMN4R4-80BS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 22 March 2012 2 of 15 NXP Semiconductors PSMN4R4-80BS N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK 5. Limiting values Table 5. Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj Tsld(M) IS ISM EDS(AL)S Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature peak soldering temperature source current peak source current Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C [1] In accordance with the Absolute Maximum Rating System (IEC 60134). Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ VGS = 10 V; Tmb = 100 °C; see Figure 1 VGS = 10 V; Tmb = 25 °C; see Figure 1 pulsed; tp ≤ 10 µs; Tmb = 25 °C; see F.


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