PSMN018-80YS

PSMN018-80YS N-channel LFPAK 80 V 18 mΩ standard level MOSFET Rev. 02 — 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ Advanced TrenchMOS provides low RDSon and low gate charge „ High efficiency gains in switching power converters „ Improved mechanical and thermal characteristics „ LFPAK provides maximum power density in a Power SO8 package 1.3 Applications „ DC-to-DC converters „ Lithium-ion battery protection „ Load switching „ Motor control „ Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 5 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 5 A; Tj = 25 °C; see Figure 12; see Figure 13 Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 Typ 15 Max Unit 80 45 89 175 28 18 V A W °C mΩ mΩ Static characteristics NXP Semiconductors PSMN018-80YS N-channel LFPAK 80 V 18 mΩ standard level MOSFET Quick reference data …continued Parameter gate-drain charge total gate charge Conditions VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14; see Figure 15 Min Typ 6 26 Max Unit nC nC Table 1. Symbo...