PSMN7R0-100BS

D2 PA K PSMN7R0-100BS N-channel 100V 6.8 mΩ standard level MOSFET in D2PAK. Rev. 2 — 2 March 2012 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction losses  Suitable for standard level gate drive 1.3 Applications  DC-to-DC converters  Load switching  Motor control  Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13 VGS = 10 V; ID = 25 A; VDS = 50 V; see Figure 15; see Figure 14 VGS = 10 V; ID = 25 A; VDS = 50 V; see Figure 14; see Figure 15 VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup = 100 V; unclamped; RGS = 50 Ω Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min -55 - Typ 5.4 36 125 Max 100 100 269 175 12 6.8 - Unit V A W °C mΩ mΩ nC nC Static characteristics Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 315 mJ [1] Continuous current is limited by packag...