Document
PSMN013-100BS
21 February 2014
D2 PA K
N-channel 100V 13.9mΩ standard level MOSFET in D2PAK
Product data sheet
1. General description
Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
2. Features and benefits
• •
High efficiency due to low switching and conduction losses Suitable for standard level gate drive
3. Applications
• • • •
DC-to-DC converters Load switching Motor control Server power supplies
4. Quick reference data
Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; Fig. 2 Tmb = 25 °C; Fig. 1
[1]
Min -55
Typ -
Max 100 68 170 175
Unit V A W °C
Static characteristics drain-source on-state resistance VGS = 10 V; ID = 15 A; Tj = 100 °C; Fig. 12; Fig. 13 VGS = 10 V; ID = 15 A; Tj = 25 °C; Fig. 13 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 25 A; VDS = 50 V; Fig. 15; Fig. 14 VGS = 10 V; ID = 25 A; VDS = 50 V; Fig. 14; Fig. 15 59 83 nC 17 23.8 nC 10.8 13.9 mΩ 19.4 25 mΩ
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NXP Semiconductors
PSMN013-100BS
N-channel 100V 13.9mΩ standard level MOSFET in D2PAK
Symbol EDS(AL)S
Parameter non-repetitive drainsource avalanche energy
[1]
Conditions VGS = 10 V; Tj(init) = 25 °C; ID = 68 A; Vsup ≤ 100 V; unclamped; RGS = 50 Ω
Min -
Typ -
Max 127
Unit mJ
Avalanche ruggedness
Continuous current is limited by package
5. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain[1] source mounting base; connected to drain
2 1 3
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
D2PAK (SOT404)
[1] It is not possible to make connection to pin 2.
6. Ordering information
Table 3. Ordering information Package Name PSMN013-100BS D2PAK Description Version plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) Type number
7. Marking
Table 4. Marking codes Marking code PSMN013-100BS Type number PSMN013-100BS
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR
PSMN013-100BS
Parameter drain-source voltage drain-gate voltage
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tj ≤ 175 °C; Tj ≥ 25 °C; RGS = 20 kΩ
All information provided in this document is subject to legal disclaimers.
Min -
Max 100 100
Unit V V
© NXP N.V. 2014. All rights reserved
Product data sheet
21 February 2014
2 / 13
NXP Semiconductors
PSMN013-100BS
N-channel 100V 13.9mΩ standard level MOSFET in D2PAK
Symbol VGS Ptot ID
Parameter gate-source voltage total power dissipation drain current
Conditions Tmb = 25 °C; Fig. 1 VGS = 10 V; Tmb = 100 °C; Fig. 2 VGS = 10 V; Tmb = 25 °C; Fig. 2
[1] [1]
Min -20 -55 -55 -
Max 20 170 47 68 272 175 175 260
Unit V W A A A °C °C °C
IDM Tstg Tj Tsld(M) IS ISM EDS(AL)S
peak drain current storage temperature junction temperature peak soldering temperature
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
Source-drain diode source current peak source current Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C VGS = 10 V; Tj(init) = 25 °C; ID = 68 A; Vsup ≤ 100 V; unclamped; RGS = 50 Ω
[1]
-
68 272
A A
Avalanche ruggedness non-repetitive drain-source avalanche energy
[1]
120 Pder (%) 80
-
127
mJ
Continuous current is limited by package
03aa16
80 ID (A) 60
003aac512
40
40
20
0
0
50
100
150
Tmb (°C)
200
0
0
50
100
150
Tmb (°C)
200
Fig. 1.
Normalized total power dissipation as a function of mounting base temperature
Fig. 2.
Continuous drain current as a function of mounting base temperature
PSMN013-100BS
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2014. All rights reserved
Product data sheet
21 February 2014
3 / 13
NXP Semiconductors
PSMN013-100BS
N-channel 100V 13.9mΩ standard level MOSFET in D2PAK
103
ID (A) Limit RDSon = VDS / ID
003aae168
102
tp =10 µs
100 µs
10 DC
1
1 ms 10 ms 100 ms
10- 1 1 10
102
VDS (V)
103
Fig. 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient
1 Zth (j-mb) (K/W) 10-1 δ = 0.5 0.2 0.1 0.05 10-2 0.02
P δ= tp T
Conditions Fig. 4
Min -
Typ 0.5
Max 0.9
Unit K/W
Rth(j-a)
minimum footprint; mounted on a printed-circuit board
-
50
-
K/W
003a a d575
10-3
s ingle s hot
tp t T
10-4 1e -6
10-5
10-4
10-3
10-2
10-1
1
tp (s )
10
Fig. 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values
All information provided in this document is subject to legal disclaimers. © NX.