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PSMN013-100BS Dataheets PDF



Part Number PSMN013-100BS
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description MOSFET
Datasheet PSMN013-100BS DatasheetPSMN013-100BS Datasheet (PDF)

PSMN013-100BS 21 February 2014 D2 PA K N-channel 100V 13.9mΩ standard level MOSFET in D2PAK Product data sheet 1. General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • • High efficiency due to low switching and conduction losses Suitable for standard level gate drive 3. Applications • • • • DC-to-DC converters Load.

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PSMN013-100BS 21 February 2014 D2 PA K N-channel 100V 13.9mΩ standard level MOSFET in D2PAK Product data sheet 1. General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • • High efficiency due to low switching and conduction losses Suitable for standard level gate drive 3. Applications • • • • DC-to-DC converters Load switching Motor control Server power supplies 4. Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; Fig. 2 Tmb = 25 °C; Fig. 1 [1] Min -55 Typ - Max 100 68 170 175 Unit V A W °C Static characteristics drain-source on-state resistance VGS = 10 V; ID = 15 A; Tj = 100 °C; Fig. 12; Fig. 13 VGS = 10 V; ID = 15 A; Tj = 25 °C; Fig. 13 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 25 A; VDS = 50 V; Fig. 15; Fig. 14 VGS = 10 V; ID = 25 A; VDS = 50 V; Fig. 14; Fig. 15 59 83 nC 17 23.8 nC 10.8 13.9 mΩ 19.4 25 mΩ Scan or click this QR code to view the latest information for this product NXP Semiconductors PSMN013-100BS N-channel 100V 13.9mΩ standard level MOSFET in D2PAK Symbol EDS(AL)S Parameter non-repetitive drainsource avalanche energy [1] Conditions VGS = 10 V; Tj(init) = 25 °C; ID = 68 A; Vsup ≤ 100 V; unclamped; RGS = 50 Ω Min - Typ - Max 127 Unit mJ Avalanche ruggedness Continuous current is limited by package 5. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain[1] source mounting base; connected to drain 2 1 3 G mbb076 Simplified outline mb Graphic symbol D S D2PAK (SOT404) [1] It is not possible to make connection to pin 2. 6. Ordering information Table 3. Ordering information Package Name PSMN013-100BS D2PAK Description Version plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) Type number 7. Marking Table 4. Marking codes Marking code PSMN013-100BS Type number PSMN013-100BS 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR PSMN013-100BS Parameter drain-source voltage drain-gate voltage Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tj ≤ 175 °C; Tj ≥ 25 °C; RGS = 20 kΩ All information provided in this document is subject to legal disclaimers. Min - Max 100 100 Unit V V © NXP N.V. 2014. All rights reserved Product data sheet 21 February 2014 2 / 13 NXP Semiconductors PSMN013-100BS N-channel 100V 13.9mΩ standard level MOSFET in D2PAK Symbol VGS Ptot ID Parameter gate-source voltage total power dissipation drain current Conditions Tmb = 25 °C; Fig. 1 VGS = 10 V; Tmb = 100 °C; Fig. 2 VGS = 10 V; Tmb = 25 °C; Fig. 2 [1] [1] Min -20 -55 -55 - Max 20 170 47 68 272 175 175 260 Unit V W A A A °C °C °C IDM Tstg Tj Tsld(M) IS ISM EDS(AL)S peak drain current storage temperature junction temperature peak soldering temperature pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 Source-drain diode source current peak source current Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C VGS = 10 V; Tj(init) = 25 °C; ID = 68 A; Vsup ≤ 100 V; unclamped; RGS = 50 Ω [1] - 68 272 A A Avalanche ruggedness non-repetitive drain-source avalanche energy [1] 120 Pder (%) 80 - 127 mJ Continuous current is limited by package 03aa16 80 ID (A) 60 003aac512 40 40 20 0 0 50 100 150 Tmb (°C) 200 0 0 50 100 150 Tmb (°C) 200 Fig. 1. Normalized total power dissipation as a function of mounting base temperature Fig. 2. Continuous drain current as a function of mounting base temperature PSMN013-100BS All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved Product data sheet 21 February 2014 3 / 13 NXP Semiconductors PSMN013-100BS N-channel 100V 13.9mΩ standard level MOSFET in D2PAK 103 ID (A) Limit RDSon = VDS / ID 003aae168 102 tp =10 µs 100 µs 10 DC 1 1 ms 10 ms 100 ms 10- 1 1 10 102 VDS (V) 103 Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient 1 Zth (j-mb) (K/W) 10-1 δ = 0.5 0.2 0.1 0.05 10-2 0.02 P δ= tp T Conditions Fig. 4 Min - Typ 0.5 Max 0.9 Unit K/W Rth(j-a) minimum footprint; mounted on a printed-circuit board - 50 - K/W 003a a d575 10-3 s ingle s hot tp t T 10-4 1e -6 10-5 10-4 10-3 10-2 10-1 1 tp (s ) 10 Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values All information provided in this document is subject to legal disclaimers. © NX.


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