MOSFET
PSMN8R5-100PS
17 October 2013
TO -2
20A
B
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
Product data sheet
...
Description
PSMN8R5-100PS
17 October 2013
TO -2
20A
B
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
Product data sheet
1. General description
Standard level N-channel MOSFET in a TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
2. Features and benefits
High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources
3. Applications
AC-to-DC power supply equipment Motor control Server power supplies Synchronous rectification
4. Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tj = 25 °C; VGS = 10 V; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 13; Fig. 12 VGS = 10 V; ID = 25 A; VDS = 50 V; Fig. 14; Fig. 15 33 111 nC nC
[1]
Min -
Typ -
Max 100 100 263
Unit V A W
Static characteristics drain-source on-state resistance 4.5 6.4 8.5 mΩ
Dynamic characteristics QGD QG(tot) EDS(AL)S gate-drain charge total gate charge
Avalanche Ruggedness non-repetitive drainsource avalanche energy
[1]
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 100 V; RGS = 50 Ω; unclamped; Fig. 3
-
-
219
mJ
Continious current limited by package.
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NXP Semiconductors
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard leve...
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