PSMN027-100PS

TO -22 0A B PSMN027-100PS N-channel 100V 26.8 mΩ standard level MOSFET in TO220 Rev. 3 — 12 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction losses  Suitable for standard level gate drive 1.3 Applications  DC-to-DC converters  Load switching  Motor control  Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 30 A; VDS = 50 V; see Figure 14; see Figure 15 9 30 nC nC Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 Typ 21 Max Unit 100 37 103 175 48 V A W °C mΩ Static characteristics 26.8 mΩ Avalanche ruggedness EDS(AL)S non-repetitive drain-source VGS = 10 V; Tj(init) = 25 °C; avalanche energy ID = 37 A; Vsup ≤ 100 V; unclamped; RGS = 50 Ω 59 mJ NXP Semiconductors PSMN027-100PS N-channel 100V 26.8 mΩ standard level MOSFET in TO220 2. Pinning information Table 2...