PSMN8R5-100XS

PSMN8R5-100XS 29 November 2012 N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A) Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction losses Isolated package Suitable for standard level gate drive 1.3 Applications AC-to-DC power supply equipment Motor control Server power supplies Synchronous rectification 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 10 A; Tj = 25 °C; Fig. 12; Fig. 13 VGS = 10 V; ID = 10 A; Tj = 100 °C; Fig. 13 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 10 A; VDS = 50 V; Fig. 14; Fig. 15 30 100 nC nC 11.18 14.9 mΩ Min Typ Max 100 49 55 Unit V A W Static characteristics drain-source on-state resistance 4.5 6.4 8.5 mΩ Scan or click this QR code to view the latest information for this product NXP Semiconductors PSMN8R5-100XS N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A) Symbol EDS(AL)S Parameter non-repetitive drainsource avalanche energy Conditions VGS = 10 V; Tj(init) = 25 °C; ...