PSMN059-150Y

LF PSMN059-150Y 3 October 2013 PA K 56 N-channel TrenchMOS SiliconMAX standard level FET Product data sheet 1. General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 2. Features and benefits Higher operating power due to low thermal resistance Suitable for high frequency applications due to fast switching characteristics 3. Applications Class D amplifier DC-to-DC converters Motion control Switched-mode power supplies 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 150 °C Tmb = 25 °C; VGS = 10 V; Fig. 1; Fig. 3 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 12 A; Tj = 25 °C; Fig. 9; Fig. 10 VGS = 10 V; ID = 12 A; VDS = 75 V; Fig. 11; Fig. 12 9.1 nC Min Typ Max 150 43 113 Unit V A W Static characteristics drain-source on-state resistance 46 59 mΩ Dynamic characteristics QGD gate-drain charge Scan or click this QR code to view the latest information for this product NXP Semiconductors PSMN059-150Y N-channel TrenchMOS SiliconMAX standard level FET 5. Pinning information Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate mounting base; connected to drain 1 2 3 4 G mbb076 Simpli...