PMK35EP

PMK35EP P-channel TrenchMOS extremely low level FET Rev. 02 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits  Low conduction losses due to low on-state resistance 1.3 Applications  Battery management  Load switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions 25 °C ≤ Tj ≤ 150 °C Tsp = 25 °C; VGS = -10 V; see Figure 1; see Figure 3 Tsp = 25 °C; see Figure 2 Min Typ Max Unit -30 -14. 9 6.9 V A W Static characteristics RDSon VGS = -10 V; ID = -9.2 A; Tj = 25 °C; see Figure 9 16 19 mΩ Dynamic characteristics QGD gate-drain charge VGS = -10 V; ID = -9.2 A; VDS = -15 V; Tj = 25 °C; see Figure 11; see Figure 12 6 nC NXP Semiconductors PMK35EP P-channel TrenchMOS extremely low level FET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 7 8 Pinning information Symbol Description S S S G D D D D source source source gate drain drain drain drain 1 4 S 001aaa025 Simplified outline 8 5 Graphic symbol D G SOT96-1 (SO8) 3. Ordering information Table 3. Ordering information Package Name PMK35EP SO8 Description plastic small outline package; ...