SO T6
NX3008PBKV
30 V, 220 mA dual P-channel Trench MOSFET
Rev. 1 — 29 July 2011 Product data sheet
1. Product profile...
SO T6
NX3008PBKV
30 V, 220 mA dual P-channel Trench MOSFET
Rev. 1 — 29 July 2011 Product data sheet
1. Product profile
1.1 General description
Dual P-channel enhancement mode Field-Effect
Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
66
1.2 Features and benefits
Very fast switching Low threshold voltage Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified
1.3 Applications
Relay driver High-speed line driver High-side loadswitch Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = -4.5 V; Tamb = 25 °C
[1]
Conditions Tj = 25 °C
Min -8 -
Typ 2.8
Max -30 8 -220 4.1
Unit V V mA Ω
Per
transistor
Static characteristics (per
transistor) drain-source on-state VGS = -4.5 V; ID = -200 mA; resistance Tj = 25 °C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NXP Semiconductors
NX3008PBKV
30 V, 220 mA dual P-channel Trench MOSFET
2. Pinning information
Table 2. Pin 1 2 3 4 5 6 Pinning information Symbol Description S1 G1 D2 S2 G2 D1 source TR1 gate TR1 drain TR2 source TR2 gate TR2 drain TR1
1 2 3
S1 S2 G1 G2
Simplified outline
6 5 4
Graphic symbol
D1
D2
SOT666 (SOT666)
017aaa260
3. Ordering information
Table 3. Ordering information Package Name NX3008PBKV SOT6...