PMV48XP

PMV48XP 20 V, 3.5 A P-channel Trench MOSFET Rev. 1 — 21 December 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits „ Logic-level compatible „ Trench MOSFET technology „ Very fast switching 1.3 Applications „ High-side loadswitch „ High-speed line driver „ Relay driver „ Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; ID = -2.4 A; pulsed; tp ≤ 300 µs; δ ≤ 0.01; Tj = 25 °C [1] Conditions Tamb = 25 °C Min -12 - Typ 48 Max Unit -20 12 -3.5 55 V V A mΩ Static characteristics [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. NXP Semiconductors PMV48XP 20 V, 3.5 A P-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol Description G S D gate source drain 1 2 S 017aaa094 Simplified outline 3 Graphic symbol D G SOT23 (TO-236AB) 3. Ordering information Table 3. Ordering information Package Name PMV48XP TO-236AB Description plastic surface-mounted package; 3 leads Version SOT23 Type number 4. Marking Table 4. PMV48XP [1] % = placeholder for manufacturing site code Marking c...