PMN27UP

SO T4 57 PMN27UP 20 V, 5.7 A P-channel Trench MOSFET Rev. 1 — 13 July 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  1.8 V RDSon rated  Very fast switching  Trench MOSFET technology 1.3 Applications  Relay driver  High-speed line driver  High-side load switch  Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; ID = -2.4 A; Tj = 25 °C [1] Conditions Tj = 25 °C Min -8 - Typ 27 Max -20 8 -5.7 32 Unit V V A mΩ Static characteristics [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning information Symbol Description D D G S D D drain drain gate source drain drain 1 2 3 S 017aaa094 Simplified outline 6 5 4 Graphic symbol D G SOT457 (TSOP6) NXP Semiconductors PMN27UP 20 V, 5.7 A P-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Package Name PMN27UP TSOP6 Description plastic surface-mounted package (TSOP6); 6 leads Version SOT457 Type number 4. Marking Table 4. PMN27UP Marking codes Marking code ZU Type number 5. Limiti...