PMN40UPE
13 August 2012
20 V, single P-channel Trench MOSFET
Product data sheet
1. Product profile
1.1 General descri...
PMN40UPE
13 August 2012
20 V, single P-channel Trench MOSFET
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect
Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits Low threshold voltage Fast switching Trench MOSFET technology 4 kV ESD protection 1.3 Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = -4.5 V; ID = -3 A; Tj = 25 °C
[1]
Conditions Tj = 25 °C
Min -8 -
Typ -
Max -20 8 -6
Unit V V A
Static characteristics drain-source on-state resistance
[1]
2
-
37
43
mΩ
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .
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NXP Semiconductors
PMN40UPE
20 V, single P-channel Trench MOSFET
2. Pinning information
Table 2. Pin 1 2 3 4 5 6 Pinning information Symbol Description D D G S D D drain drain gate source drain drain
S
017aaa259
Simplified outline
6 5 4
Graphic symbol
D
1
2
3
G
TSOP6 (SOT457)
3. Ordering information
Table 3. Ordering information Package Name PMN40UPE TSOP6 Description plastic surface-mounted package (TSOP6); 6 leads Version...