PMN50UPE

PMN50UPE 20 July 2012 20 V, single P-channel Trench MOSFET Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 3 kV ESD protected Trench MOSFET technology Low threshold voltage 1.3 Applications Relay driver High-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = -4.5 V; ID = -3.6 A; Tj = 25 °C [1] Conditions Tj = 25 °C Min -8 - Typ - Max -20 8 -4 Unit V V A Static characteristics drain-source on-state resistance [1] 2 - 50 66 mΩ Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . Scan or click this QR code to view the latest information for this product NXP Semiconductors PMN50UPE 20 V, single P-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning information Symbol Description D D G S D D drain drain gate source drain drain S 017aaa259 Simplified outline 6 5 4 Graphic symbol D 1 2 3 G TSOP6 (SOT457) 3. Ordering information Table 3. Ordering information Package Name PMN50UPE TSOP6 Description plastic surface-mounted package (TSOP6); 6 leads Version SOT457 Type number 4. Marking Table 4. Ma...