PMN80XP

SO T4 57 PMN80XP 20 V, single P-channel Trench MOSFET Rev. 1 — 8 May 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  RDSon specified at 1.8 V operation  Trench MOSFET technology  Fast switching 1.3 Applications  Relay driver  High-speed line driver  High-side loadswitch  Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = -4.5 V; ID = -2.5 A; Tj = 25 °C [1] Conditions Tamb = 25 °C Min -12 - Typ 80 Max -20 12 -3.2 102 Unit V V A mΩ Static characteristics [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning information Symbol Description D D G S D D drain drain gate source drain drain 1 2 3 S 017aaa257 Simplified outline 6 5 4 Graphic symbol D G SOT457 (TSOP6) NXP Semiconductors PMN80XP 20 V, single P-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Package Name PMN80XP TSOP6 Description plastic surface-mounted package (TSOP6); 6 leads Version SOT457 Type number 4. Marking Table 4. PMN80XP Marking codes Marking code...